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2SD2673
Transistors
Low frequency amplifier
2SD2673
Application Low frequency amplifier Driver External dimensions (Unit : mm)
TSMT3
1.0MAX
2.9
0.85 0.7
(1)
(2)
0.95 0.95 1.9
0.16
(1) Base (2) Emitter (3) Collector
Abbreviated symbol : YZ
Each lead has same dimensions
Absolute maximum ratings (Ta=25C)
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Power dissipation Junction temperature Range of storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Limits 30 30 6 3 6 500 1 2 150 -55 to +150 Unit V V V A A1 mW W C C
Packaging specifications
Package Type Code Basic ordering unit (pieces) 2SD2673 Taping TL 3000
1 Single pulse, PW=1ms 2 Mounted on a 25x25x t 0.8mm Ceramic substrate
Electrical characteristics (Ta=25C)
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current gain Transition frequency Collector output capacitance
Pulsed
Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE fT Cob
Min. 30 30 6 - - - 270 - -
Typ. - - - - - 120 - 200 40
Max. - - - 100 100 250 680 - -
Unit V V V nA nA mV - MHz pF
Conditions IC=10A IC=1mA IE=10A VCB=30V VEB=6V IC=1.5A, IB=30mA VCE=2V, IC=200mA VCE=2V, IE=-200mA, f=100MHz VCB=10V, IE=0A, f=1MHz
Rev.C
0.3~0.6
Features 1) A collector current is large. (3A) 2) VCE(sat) : max. 250mV At IC = 1.5A / IB = 30mA
0.4
(3)
1.6 2.8
0~0.1
1/2
2SD2673
Transistors
Electrical characteristic curves
BASE SATURATION VOLTAGE : VBE (sat) (V) COLLECTOR SATURATION VOLTAGE : VCE (sat) (V)
1000
Ta=125C Ta=25C
1
IC/IB=20/1 Pulsed
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)
1000
IC/IB=20/1 Pulsed
DC CURRENT GAIN : hFE
Ta=-40C
0.1
Ta=25C
Ta=125C
100
100
Ta=-40C
0.01
Ta=-40C
Ta=25C
Ta=125C
VCE=-2V Pulsed
10 0.001
0.01
0.1
1
10
0.001 0.001
0.01
0.1
1
10
10 0.001
0.01
0.1
1
10
COLLECTOR CURRENT : IC (A)
COLLECTOR CURRENT : IC (A)
COLLECTOR CURRENT : IC (A)
Fig.1 DC current gain vs. collector current
Fig.2 Collector-emitter saturation voltage base-emitter saturation voltage vs. collector current
Fig.3 Collector-emitter saturation voltage vs. collector current
EMITTER INPUT CAPACITANCE : Cib (pF) COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
10
COLLECTOR CURRENT : IC (A)
VBE=2V Pulsed
1000
100
Cib Cob
100
1
Ta=125C
0.1
TRANSITION FREQUENCY : fT (MHz)
Ta=25C IC=0A f=1MHz
Ta=25C VCE=2V f=100MHz
10
Ta=25C
Ta=-40C
0.01
0.001 0
1 BASE TO EMITTER CURRENT : VBE (V)
10
10 0.01
0.1
1
10
1 0.01
0.1
1
10
EMITTER TO BASE VOLTAGE : VEB(V) COLLECTOR TO BASE VOLTAGE : VCB(V)
EMITTER CURRENT : IE (A)
Fig.4 Grounded emitter propagation characteristics
Fig.5 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage
Fig.6 Gain bandwidth product vs. emitter current
10000
Ta=25C VCE=-12V IC/IB=20/1 Pulsed
SWITCHING TIME : (ns)
1000
tstg tr
100
tdon
tf
10 0.01
0.1
1
10
COLLECTOR CURRENT : IC (A)
Fig.7 Switching time
Rev.C
2/2
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1

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